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    PL

    Detection principle

    · Photoluminescence (PL for short), the defects of solar cells often limit their photoelectric conversion efficiency and service life

    · Photoluminescence can quickly detect silicon wafers through the change of minority carrier lifetime. The principle is to use the principle of photoluminescence to obtain fluorescent photos of crystalline silicon, and it has high resolution to detect the rough surface and internal damage of silicon wafers.

    · Compared with the EL test, which needs to touch the sample, the PL test does not touch the sample, so it can monitor the production process of the production cell



    ProjectSpecification
    Equipment size

    Length 450mm Width 450mm Height 770mm

    Applicable maximum size175*175mm
    Applicable Wafer Type

    Single crystal, polycrystalline

    Maximum capacity

    >3600PCS/hour

    Pixel Accuracy

    <0.34mm (0.5K line scan camera)

    Detection accuracy<0.34mm

    UPTime

    >98%




    ProjectSpecification

    Black heart, black edge, black

    Single crystal, polycrystalline

    CrackSingle crystal, polycrystalline
    Scratches

    Single crystal, polycrystalline

    Pollute

    Single crystal, polycrystalline

    Broken grid

    Single crystal, polycrystalline

    Uneven sintering

    		Single crystal, polycrystalline
    Dislocation

    Polycrystalline

    DamagedSingle crystal, polycrystalline



    Imaging effect